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Infineon | IPD096N08N3GATMA1

Manufacturer Part #

IPD096N08N3GATMA1

IPD096N08N3G Series 80 V 73 A 9.6 mOhm 100 W 26 nC N-Channel MOSFET - TO-252

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD096N08N3GATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 9.6mΩ
Rated Power Dissipation: 100W
Qg Gate Charge: 26nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 73A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 23ns
Rise Time: 30ns
Fall Time: 5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 1810pF
Series: OptiMOS 3
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,400.00
USD
Quantity
Unit Price
2,500
$0.56
5,000
$0.555
7,500
$0.55
12,500+
$0.54
Product Variant Information section