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Infineon | IPN50R1K4CEATMA1

Manufacturer Part #

IPN50R1K4CEATMA1

Trans MOSFET N-CH 500V 3.1A 3-Pin 1.4 rdson SOT-223 T/R

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPN50R1K4CEATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 1.4Ω
Rated Power Dissipation: 5W
Qg Gate Charge: 8.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 4.8A
Turn-on Delay Time: 6.5ns
Turn-off Delay Time: 23ns
Rise Time: 6ns
Fall Time: 30ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 178pF
Series: CoolMOS CE
Package Style:  SOT-223 (TO-261-4)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$525.00
USD
Quantity
Unit Price
3,000
$0.175
6,000
$0.173
12,000
$0.171
15,000
$0.17
45,000+
$0.166
Product Variant Information section