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Manufacturer Part #

IRFSL3207ZPBF

Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - TO-262-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFSL3207ZPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 4.1mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 120nC
Package Style:  TO-262 (I2PAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$1,780.00
USD
Quantity
Unit Price
1
$1.85
40
$1.83
150
$1.80
500
$1.78
2,000+
$1.73
Product Variant Information section