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Manufacturer Part #

SI4936CDY-T1-GE3

Dual N-Channel 30 V 0.04 Ohm 2.3 W Surface Mount Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2534
Product Specification Section
Vishay SI4936CDY-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.04Ω
Rated Power Dissipation: 2.3|W
Qg Gate Charge: 9nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
7,500
Factory Lead Time:
14 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$477.50
USD
Quantity
Unit Price
2,500
$0.191
7,500
$0.187
10,000
$0.186
25,000
$0.183
37,500+
$0.181
Product Variant Information section