text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. SI8806DB-T2-E1

Vishay | SI8806DB-T2-E1

Manufacturer Part #

SI8806DB-T2-E1

Single N-Channel 12 V 0.9 W 17 nC Silicon Surface Mount Mosfet - MICRO-FOOT

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2505
Product Specification Section
Vishay SI8806DB-T2-E1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 12V
Drain-Source On Resistance-Max: 0.075Ω
Rated Power Dissipation: 0.9W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 3.9A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 30ns
Rise Time: 40ns
Fall Time: 25ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: Si
Height - Max: 0.8mm
Length: 0.8mm
Package Style:  MICRO-FOOT
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
294,000
Factory Lead Time:
52+Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,560.00
USD
Quantity
Unit Price
3,000
$0.52
6,000
$0.515
9,000
$0.51
15,000+
$0.50
Product Variant Information section