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Manufacturer Part #

SQJ454EP-T1_GE3

N-CHANNEL 200-V (D-S) 175C MOSFET

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Date Code:
Product Specification Section
Vishay SQJ454EP-T1_GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 145mΩ
Rated Power Dissipation: 68W
Qg Gate Charge: 56nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 13A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 33ns
Rise Time: 5ns
Fall Time: 8ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Input Capacitance: 1990pF
Series: TrenchFET
Package Style:  POWERPAK-SO-8L
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
25 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$2,295.00
USD
Quantity
Unit Price
3,000+
$0.765