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Manufacturer Part #

TQM300NB06DCR RLG

MOSFET 60V, 25A, Dual N-Channel Power MOSFET

ECAD Model:
Mfr. Name: Taiwan Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Taiwan Semiconductor TQM300NB06DCR RLG - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 30mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6A
Turn-on Delay Time: 3ns
Turn-off Delay Time: 11ns
Rise Time: 21ns
Fall Time: 15ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.6V
Input Capacitance: 1020pF
Package Style:  PDFN56U
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
5000
Multiple Of:
2500
Total
$2,400.00
USD
Quantity
Unit Price
2,500+
$0.48
Product Variant Information section