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Manufacturer Part #

AFT09MS031GNR1

Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz,31 W, 13.6 V

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
NXP AFT09MS031GNR1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: LDMOS
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Rated Power Dissipation: 317W
Gate-Source Voltage-Max [Vgss]: 12V
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 2.1V
Input Capacitance: 140pF
Package Style:  TO-270-2
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
10 Weeks
Minimum Order:
500
Multiple Of:
500
Total
$8,745.00
USD
Quantity
Unit Price
500+
$17.49
Product Variant Information section