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STMicroelectronics — Silicon Carbide (SiC) MOSFETs

STMicroelectronics

 

STMicroelectronics Silicon Carbide (SiC) MOSFETs

The latest breakthrough in high-voltage switching and rectification

STMicroelectronics Silicon Carbide (SiC) MOSFETs include 650 / 1200 V SiC MOSFETs featuring the industry’s highest junction temperature rating of 200°C for more efficient and simplified designs. The portfolio also includes SiC diodes ranging from 600 to 1200 V, which feature negligible switching losses and 15% lower forward voltage (VF) than standard silicon diodes.

Features of SiC MOSFETs

  • Reduced cooling requirements and heatsink thanks to the industry’s highest operating junction temperature (Tj max) of 200 °C and low on-state resistance over the entire temperature range
  • Extremely low power losses
  • Increase of on-resistance versus temperature
  • Very easy to drive (resulting in smaller component count)
  • High operating frequency for reduced switching losses and smaller/lighter systems
  • Fast and robust intrinsic body diode

Features of SiC Diodes

  • Increased efficiency with very low forward conduction losses
  • Low switching losses for reduced size and cost of the power converter
  • Soft switching behavior (low EMC impact), simplifying certification and speeding time-to market
  • High forward surge capability for increased robustness and reliability
  • High power integration (dual diodes) for reduced PCB form factor
  • High-temperature capability with Tj max = 175 °C
  • AEC-Q101-qualified and PPAP-capable automotive-grade SiC diodes

 

 

Benefits of Silicon Carbide Technology

Design Your Application the Smart Way