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Manufacturer Part #

SCT50N120

N-Channel 1200 V 59 mΩ 122 nC Silicon Carbide Power Mosfet - HiP247

Product Specification Section
STMicroelectronics SCT50N120 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 65A
Input Capacitance: 1900pF
Power Dissipation: 318W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
41 Weeks
Minimum Order:
600
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$11,412.00
USD
Quantity
Web Price
1
$19.97
5
$19.69
20
$19.46
50
$19.31
125+
$19.02