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Manufacturer Part #

NGTB50N65FL2WG

650 V 100 A Through Hole Insulated Gate Bipolar Transistor (IGBT) - TO-247-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NGTB50N65FL2WG - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 100A
Power Dissipation-Tot: 417W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 200A
Collector - Emitter Saturation Voltage: 1.8V
Turn-on Delay Time: 100ns
Turn-off Delay Time: 237ns
Qg Gate Charge: 220nC
Reverse Recovery Time-Max: 94ns
Leakage Current: 200nA
Input Capacitance: 5328pF
Thermal Resistance: 40°C/W
Operating Temp Range: -55°C to +175°C
No of Terminals: 3
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
210
Multiple Of:
30
Total
$835.80
USD
Quantity
Unit Price
30
$4.07
90
$4.01
150
$3.98
450
$3.92
750+
$3.87
Product Variant Information section