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onsemi | FDD5680

Manufacturer Part #

FDD5680

N-Channel 60 V 21 mOhm Surface Mount PowerTrench Mosfet TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDD5680 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.021Ω
Rated Power Dissipation: 1.3|W
Qg Gate Charge: 33nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FDD5680 is a 60 V 21 mΩ N-Channel PowerTrench Mosfet Available in a TO-252 Package .

This N-Channel MOSFET is produced using PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features:

  • 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V, RDS(on) = 0.025 Ω @ VGS = 6 V.
  • Low gate charge (33nC typical).
  • Fast switching speed.
  • High performance trench technology for extremelylow RDS(on)

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Access Point/Router
  • Server & Mainframe
  • Media Tablets
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
33 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,275.00
USD
Quantity
Unit Price
2,500
$0.91
5,000
$0.90
7,500+
$0.885
Product Variant Information section