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Manufacturer Part #

IPD90N06S4L03ATMA2

60V, 90A, 35MOHM, N-CHANNEL, DPAK, MOSFET

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD90N06S4L03ATMA2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 3.5mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 133nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 90A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 140ns
Rise Time: 6ns
Fall Time: 20ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.7V
Technology: OptiMOS
Input Capacitance: 10000pF
Series: OptiMOS-T2
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,350.00
USD
Quantity
Unit Price
2,500
$0.94
5,000
$0.925
7,500+
$0.915
Product Variant Information section