text.skipToContent text.skipToNavigation

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMYH200R050M1HXKSA1

Infineon | IMYH200R050M1HXKSA1

Manufacturer Part #

IMYH200R050M1HXKSA1

CoolSiC Series 2000 V 48 A 64 mOhm Single N-Channel SiC Trench MOSFET - TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IMYH200R050M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 2000V
Drain Current: 48A
Power Dissipation: 348W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
240
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$412.20
USD
Quantity
Unit Price
30
$13.74
90
$13.63
120
$13.60
300
$13.51
450+
$13.42
Product Variant Information section