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Référence fabricant

IR2101STRPBF

IR2101S Series Dual 25V Surface Mount High and Low Side Driver - SOIC-8

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Code de date:
Product Specification Section
Infineon IR2101STRPBF - Caractéristiques techniques
Attributes Table
Configuration: High and Low Side
No of Outputs: Dual
Peak Output Current: 0.27A
Supply Voltage-Max: 25V
Rated Power Dissipation: 0.625W
Quiescent Current: 270µA
Turn-off Delay Time: 220ns
Turn-on Delay Time: 220ns
Rise Time: 170ns
Fall Time: 90ns
Operating Temp Range: -55°C to +150°C
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications

The IR2101STRPBF is a high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Features

Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V, and 15V logic input compatible
Matched propagation delay for both channels
Outputs in phase with inputs
Lead-Free

The IR2101STRPBF is a High and Low Side Driver. It comes in a SOIC-8 package and is shipped in reels.

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :Order inventroy details
2 500
Stock d'usine :Stock d'usine :
0
Délai d'usine :
20 Semaines
Commande minimale :
2500
Multiples de :
2500
Total 
1 437,50 $
USD
Quantité
Prix unitaire
2 500
$0.575
5 000+
$0.56