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Diodes Incorporated | DMN3018SSS-13

Manufacturer Part #

DMN3018SSS-13

N-Channel 30 V 21 mΩ 13.2 nC SMT Enhancement Mode Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN3018SSS-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 21mΩ
Rated Power Dissipation: 1.4W
Qg Gate Charge: 13.2nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 7.3A
Turn-on Delay Time: 4.3ns
Turn-off Delay Time: 20.1ns
Rise Time: 4.4ns
Fall Time: 4.1ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.7V
Input Capacitance: 697pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$246.75
USD
Quantity
Unit Price
2,500
$0.0987
5,000
$0.097
10,000
$0.0954
12,500
$0.0949
37,500+
$0.0917
Product Variant Information section