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Manufacturer Part #

IRF7205TRPBF

Single P-Channel 30V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2509
Product Specification Section
Infineon IRF7205TRPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -30V
Drain-Source On Resistance-Max: 0.13Ω
Rated Power Dissipation: 2.5W
Qg Gate Charge: 40nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: -4.6A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 150ns
Rise Time: 60ns
Fall Time: 100ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -3V
Technology: Advanced Process Technology
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 870pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
24,000
USA:
24,000
16,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,160.00
USD
Quantity
Unit Price
4,000
$0.29
12,000
$0.285
20,000+
$0.28
Product Variant Information section