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Vishay | SI1411DH-T1-GE3

Manufacturer Part #

SI1411DH-T1-GE3

P-Channel 150 V 2.6 Ohm 1 W SMT TrenchFET Power Mosfet - SOT-363

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2613
Product Specification Section
Vishay SI1411DH-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 2.6Ω
Rated Power Dissipation: 1W
Qg Gate Charge: 4.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 0.42A
Turn-on Delay Time: 4.5ns
Turn-off Delay Time: 9ns
Rise Time: 11ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,200.00
USD
Quantity
Unit Price
3,000
$0.40
6,000
$0.395
9,000
$0.39
15,000+
$0.38
Product Variant Information section