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Manufacturer Part #

SI1411DH-T1-GE3

P-Channel 150 V 2.6 Ohm 1 W SMT TrenchFET Power Mosfet - SOT-363

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI1411DH-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 2.6Ω
Rated Power Dissipation: 1W
Qg Gate Charge: 4.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 0.42A
Turn-on Delay Time: 4.5ns
Turn-off Delay Time: 9ns
Rise Time: 11ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,025.00
USD
Quantity
Unit Price
3,000
$0.675
6,000
$0.665
9,000
$0.66
12,000+
$0.655
Product Variant Information section