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Référence fabricant

STD25NF10T4

N-Channel 100 V 0.038 Ohm Surface Mount STripFET II Power MosFet - TO-252-3

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STD25NF10T4 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.038Ω
Rated Power Dissipation: 100|W
Qg Gate Charge: 55nC
Style d'emballage :  TO-252-3 (DPAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The STD25NF10T4 is a N-channel Low gate charge STripFET™ II Power MOSFET. 

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It has an Operating temperature ranges b/w -55 °C to 175 °C and available in a DPAK Package.

Features:

  • Exceptional dv/dt capability
  • Application oriented characterization
  • 100% avalanche tested

Applications:

  • Switching application

View the list of available STD25N Series of MOSFETs

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
13 Semaines
Commande minimale :
2500
Multiples de :
2500
Total 
1 637,50 $
USD
Quantité
Prix unitaire
2 500
$0.655
5 000
$0.65
7 500
$0.645
10 000
$0.64
12 500+
$0.63
Product Variant Information section