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STMicroelectronics | STW88N65M5

Manufacturer Part #

STW88N65M5

STW88N65M5 Series 650 V 0.029 Ohm 84 A N-Channel MDmesh™ V Power Mosfet-TO-247-3

ECAD Model:
Mfr. Name: STMicroelectronics
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Product Variant Information section
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Product Specification Section
STMicroelectronics STW88N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.024Ω
Rated Power Dissipation: 450|W
Qg Gate Charge: 204nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 84A
Gate Source Threshold: 4V
Package Style:  TO-247-3
Mounting Method: Flange Mount
Features & Applications

The STW88N65M5 is a N-channel MDmesh™ V Power MOSFET. This device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low on-resistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features:

  • Worldwide best RDS(on) in TO-247
  • Higher VDSS rating
  • Higher dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested

Applications:

  • Servers
  • PV inverters
  • Telecom infrastructure
  • Multi kW battery chargers
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
450
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
600
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$6,864.00
USD
Quantity
Unit Price
30
$11.72
90
$11.63
150
$11.59
300
$11.53
600+
$11.44
Product Variant Information section
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