text.skipToContent text.skipToNavigation

Manufacturer Part #

STW88N65M5

STW88N65M5 Series 650 V 0.029 Ohm 84 A N-Channel MDmesh™ V Power Mosfet-TO-247-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Date Code: 2111
Product Specification Section
STMicroelectronics STW88N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.024Ω
Rated Power Dissipation: 450|W
Qg Gate Charge: 204nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 84A
Gate Source Threshold: 4V
Package Style:  TO-247-3
Mounting Method: Flange Mount
$Features & Applications

The STW88N65M5 is a N-channel MDmesh™ V Power MOSFET. This device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low on-resistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features:

  • Worldwide best RDS(on) in TO-247
  • Higher VDSS rating
  • Higher dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested

Applications:

  • Servers
  • PV inverters
  • Telecom infrastructure
  • Multi kW battery chargers
Pricing Section
Global Stock:
66,886
USA:
66,886
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
1
Multiple Of:
1
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$15.11
USD
Quantity
Web Price
1
$15.11
5
$14.92
25
$14.73
75
$14.60
200+
$14.39