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Taiwan Semiconductor | TSM6502CR RLG

Manufacturer Part #

TSM6502CR RLG

DUALN/P,-60V, -18A,PDFN56

ECAD Model:
Mfr. Name: Taiwan Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2414
Product Specification Section
Taiwan Semiconductor TSM6502CR RLG - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 34, 68mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 10.3, 9.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 24, 18A
Turn-on Delay Time: 7.4, 4ns
Turn-off Delay Time: 18, 44ns
Rise Time: 25, 28ns
Fall Time: 18, 44ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.7, 1.5V
Input Capacitance: 1159, 930pF
Package Style:  PDFN-8
Mounting Method: Screw Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,125.00
USD
Quantity
Unit Price
2,500
$0.45
5,000
$0.445
7,500
$0.44
12,500+
$0.43
Product Variant Information section