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Manufacturer Part #

NTHL040N120SC1

N-Channel 1200 V 60 A 348 W Through Hole Silicon Carbide MOSFET - TO-247-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NTHL040N120SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 60A
Input Capacitance: 1781pF
Power Dissipation: 348W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
450
Multiple Of:
450
Total
$5,782.50
USD
Quantity
Unit Price
450+
$12.85
Product Variant Information section