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Manufacturer Part #

GAN039-650NBBHP

GaN FETs 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Nexperia GAN039-650NBBHP - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 58.5A
No of Channels: 1
Qg Gate Charge: 26nC
Drain-to-Source Voltage [Vdss]: 650V
Gate-Source Voltage-Max [Vgss]: 20V
Input Capacitance: 1980pF
Rated Power Dissipation: 250W
Operating Temp Range: -55°C to +150°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1000
Multiple Of:
1000
Total
$16,520.00
USD
Quantity
Unit Price
1,000+
$16.52
Product Variant Information section