text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. IGBTs
  6. STGWT40H65DFB

STMicroelectronics | STGWT40H65DFB

Manufacturer Part #

STGWT40H65DFB

STGWT40 Series 650 V 80 A Through Hole Silicon IGBT - TO-3P

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STGWT40H65DFB - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 80A
Power Dissipation-Tot: 283W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 160A
Collector - Emitter Saturation Voltage: 1.6V
Turn-on Delay Time: 40ns
Turn-off Delay Time: 142ns
Qg Gate Charge: 210nC
Reverse Recovery Time-Max: 62ns
Leakage Current: 250nA
Input Capacitance: 5412pF
Thermal Resistance: 50°C/W
Operating Temp Range: -55°C to +175°C
No of Terminals: 3
Package Style:  TO-3P
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
800
Multiple Of:
20
Total
$1,488.00
USD
Quantity
Unit Price
20
$1.92
100
$1.89
400
$1.86
1,000
$1.84
2,500+
$1.81
Product Variant Information section