
Manufacturer Part #
STGWT40H65DFB
STGWT40 Series 650 V 80 A Through Hole Silicon IGBT - TO-3P
Product Specification Section
STMicroelectronics STGWT40H65DFB - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
Active
STMicroelectronics STGWT40H65DFB - Technical Attributes
Attributes Table
CE Voltage-Max: | 650V |
Collector Current @ 25C: | 80A |
Power Dissipation-Tot: | 283W |
Gate - Emitter Voltage: | 20V |
Pulsed Collector Current: | 160A |
Collector - Emitter Saturation Voltage: | 1.6V |
Turn-on Delay Time: | 40ns |
Turn-off Delay Time: | 142ns |
Qg Gate Charge: | 210nC |
Reverse Recovery Time-Max: | 62ns |
Leakage Current: | 250nA |
Input Capacitance: | 5412pF |
Thermal Resistance: | 50°C/W |
Operating Temp Range: | -55°C to +175°C |
No of Terminals: | 3 |
Package Style: | TO-3P |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
15 Weeks
Quantity
Unit Price
20
$2.10
80
$2.06
300
$2.03
600
$2.01
1,500+
$1.98
Product Variant Information section
Available Packaging
Package Qty:
20 per Tube
Package Style:
TO-3P
Mounting Method:
Through Hole