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Manufacturer Part #
IRF100B201
Single N-Channel 100 V 4.2 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
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Infineon IRF100B201 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF100B201&field4=Infineon&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/irf100b201-infineon-4059257
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF100B201&field4=Infineon&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--mosfets/irf100b201-infineon-4059257
Infineon IRF100B201 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 4.2mΩ |
| Rated Power Dissipation: | 441|W |
| Qg Gate Charge: | 170nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole