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Infineon | IRF100B201

Manufacturer Part #

IRF100B201

Single N-Channel 100 V 4.2 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2425
Product Specification Section
Infineon IRF100B201 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.2mΩ
Rated Power Dissipation: 441|W
Qg Gate Charge: 170nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
7,600
USA:
7,600
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$88.00
USD
Quantity
Unit Price
50
$1.76
200
$1.73
750
$1.70
2,500+
$1.67
Product Variant Information section