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Manufacturer Part #

IRFB7530PBF

Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2338
Product Specification Section
Infineon IRFB7530PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 2mΩ
Rated Power Dissipation: 375|W
Qg Gate Charge: 274nC
Package Style:  ITO-220AB
Mounting Method: Flange Mount
Pricing Section
Global Stock:
900
USA:
900
900
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$87.50
USD
Quantity
Unit Price
50
$1.75
200
$1.72
750
$1.70
1,250
$1.69
2,500+
$1.66
Product Variant Information section