Manufacturer Part #
SI4435DYTRPBF
Single P-Channel 30 V 0.02 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Reel Package Style:SOIC-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon SI4435DYTRPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Discontinuation
06/27/2025 Details and Download
ADVISORY
11/14/2022 Details and Download
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Obsolete
Obsolete
Infineon SI4435DYTRPBF - Technical Attributes
Attributes Table
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 0.02Ω |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 40nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 8A |
| Turn-on Delay Time: | 16ns |
| Turn-off Delay Time: | 130ns |
| Rise Time: | 76ns |
| Fall Time: | 90ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1V |
| Technology: | PowerTrench |
| Height - Max: | 1.75mm |
| Length: | 5mm |
| Input Capacitance: | 2320pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
13 Weeks
Quantity
Unit Price
4,000
$0.31
12,000
$0.305
20,000+
$0.30
Product Variant Information section
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount