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Infineon | IMW65R048M1HXKSA1

Manufacturer Part #

IMW65R048M1HXKSA1

IMW65R Series 650 V 39 A CoolSiCª M1 SiC Trench Power Device - PG-TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IMW65R048M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 39A
Input Capacitance: 1118pF
Power Dissipation: 125W
Operating Temp Range: -55°C to +150°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
22 Weeks
Minimum Order:
240
Multiple Of:
30
Total
$1,077.60
USD
Quantity
Unit Price
30
$4.57
120
$4.49
300
$4.44
750
$4.39
1,200+
$4.32
Product Variant Information section