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  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMZA65R083M1HXKSA1

Infineon | IMZA65R083M1HXKSA1

Manufacturer Part #

IMZA65R083M1HXKSA1

IMZA Series N-Channel 650 V 26A 104W TH Silicon Carbide MOSFET TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2250
Product Specification Section
Infineon IMZA65R083M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 26A
Input Capacitance: 624pF
Power Dissipation: 104W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
240
USA:
240
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$96.60
USD
Quantity
Unit Price
30
$3.22
120
$3.17
450
$3.12
750
$3.11
1,500+
$3.05
Product Variant Information section