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Référence fabricant
93LC46B-I/P
93LC46 Series 1 Kbit (64 x 16) 5.5 V Microwire Compatible Serial EEPROM - DIP-8
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| Nom du fabricant: | Microchip | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :60 par Tube Style d'emballage :DIP-8 Méthode de montage :Through Hole | ||||||||||
| Code de date: | 2329 | ||||||||||
Microchip 93LC46B-I/P - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: Qualification of Microchip Technology Gresham ? Fab 4 (GRTM) as a new fabrication location for the selected 24AA00xx, 24AA65, 24C00, 24C65, 24LC00, 24LC21xx, 24LC22A, 24LC65, 24LCS21A, 24LCS22A, 25AA040, 25AA080, 25AA160, 25C040, 25C080, 25C160, 25LC040, 25LC080, 25LC160, 93AA46, 93AA56, 93AA66, 93AA76, 93AA86, 93C46B, 93C56, 93C66xx, 93C76, 93C86, 93LC46xx, 93LC56, 93LC66xx, 93LC76 and 93LC86 device families of 77k technology available in various packages.Reason for Change: To improve manufacturability and on time delivery performance by qualifying a new fabrication location (GRTM - FAB 4), which is a Microchip-owned facility that offers significant expansion potential to better meet future client demand.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=93LC46B-I/P&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--memory--RAM--eeprom--micro-wire-interface-protocol/93lc46b-i-p-microchip-3988219
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=93LC46B-I/P&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--memory--RAM--eeprom--micro-wire-interface-protocol/93lc46b-i-p-microchip-3988219
Microchip 93LC46B-I/P - Caractéristiques techniques
| Memory Density: | 1kb |
| Memory Organization: | 64 x 16 |
| Supply Voltage-Nom: | 2.5V to 5.5V |
| Clock Frequency-Max: | 2MHz |
| Write Cycle Time-Max (tWC): | 6ms |
| Style d'emballage : | DIP-8 |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
This device provides dedicated 16-bit communication with advanced CMOS technology and makes this device ideal for low power, nonvolatile memory application.
Features:
- Low-Power CMOS Technology
- ORG Pin to Select Word Size for ‘46C’ Version
- 64 x 16-bit Organization ‘B’ Devices (no ORG)
- Self-Timed Erase/Write Cycles (including Auto-Erase)
- Automatic Erase All (ERAL) Before Write All (WRAL)
- Power-On/Off Data Protection Circuitry
- Industry Standard 3-Wire Serial I/O
- Device Status Signal (Ready/Busy)
- Sequential Read Function
- 1,000,000 Erase/Write Cycles Data Retention > 200 Years
- Pb-free and RoHS Compliant
- Temperature Ranges Supported:
- Industrial (I) -40°C to +85°C
- Automotive (E) -40°C to +125°C
Emballages disponibles
Qté d'emballage(s) :
60 par Tube
Style d'emballage :
DIP-8
Méthode de montage :
Through Hole