Manufacturer Part #
H11AA4M
DIP-6 Through Hole Single Channel 80 V 4170 Vrms Phototransistor Optocoupler
|
|
|||||||||||
|
|
|||||||||||
| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:50 per Tube Package Style:DIP-6 Mounting Method:Through Hole |
||||||||||
| Date Code: | 2543 | ||||||||||
Product Specification Section
onsemi H11AA4M - Technical Attributes
Attributes Table
| No of Channels: | 1 |
| Isolation Voltage-RMS: | 4170V |
| Output Voltage-Max: | 80V |
| CTR-Min: | 100% |
| Operating Temp-Max: | 100°C |
| Package Style: | DIP-6 |
| Mounting Method: | Through Hole |
Features & Applications
The H11AA4M consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
Features:
- Bi-polar emitter input
- Built-in reverse polarity input protection
- Underwriters Laboratory (UL) recognized File#E90700, Volume 2
- VDE approved File #102497 (ordering option ‘V’)
Applications:
- AC line monitor
- Unknown polarity DC sensor
- Telephone line interface
Pricing Section
Global Stock:
11,643
USA:
11,643
Factory Lead Time:
15 Weeks
Quantity
Unit Price
100
$0.235
250
$0.23
750
$0.225
1,500
$0.22
4,000+
$0.215
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
DIP-6
Mounting Method:
Through Hole