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  3. Infineon — 1ED301xMC12I Single-Channel Gate Driver IC with Reinforced Isolation

Infineon — 1ED301xMC12I Single-Channel Gate Driver IC with Reinforced Isolation

 

Infineon

Infineon 1ED301xMC12I Single-Channel Gate Driver IC

High-speed, reinforced-isolation gate drivers for high-voltage power switching

The Infineon IED301x EiceDRIVER™ family consists of single-channel isolated gate driver ICs engineered for high-voltage power conversion systems requiring fast switching, strong noise immunity, and compact design. Designed as opto-compatible replacements, these drivers use Infineon’s coreless transformer isolation technology to deliver reinforced isolation while eliminating the aging and performance limitations associated with optocouplers.

All devices in the IED301x family support functional offset voltages up to 2300 V and provide strong gate drive capability with 6.5 A sink and 6 A source peak output current. Best-in-class propagation delay of 40 ns, low part-to-part skew, and extremely high common-mode transient immunity (CMTI > 300 kV/µs) enable precise, reliable switching in demanding environments.

Packaged in a compact wide-body LDSO package with 8 mm creepage and CTI 600 rating, the IED301x family is pin-to-pin compatible with opto-based gate drivers already on the market. Variants are optimized for silicon MOSFETs, IGBTs, or SiC MOSFETs through device-specific undervoltage lockout (UVLO) thresholds, allowing designers to select the best fit for their power topology without redesigning the PCB.

Featured Devices

The 1ED3010MC12I is a 2300 V single-channel isolated gate driver optimized for silicon MOSFET applications. It provides reinforced isolation, fast switching performance, and UVLO thresholds suited for Si-based designs, making it ideal for high-voltage industrial and energy systems.

The 1ED3011MC12I targets IGBT-based power stages, offering reinforced isolation up to 5.7 kV (rms) and UVLO levels optimized for IGBT gate requirements. Its opto-emulator input and high drive strength enable efficient and reliable operation in high-power conversion systems.

Designed for wide-bandgap power devices, the 1ED3012MC12I supports SiC MOSFET switching with higher UVLO thresholds to meet SiC gate drive requirements. Its high CMTI and fast propagation delay make it well-suited for high-speed, high-efficiency power designs.

Features & Benefits

  • Supports up to 2300 V functional offset voltage
  • Reinforced isolation using coreless transformer technology
  • Strong 6.5 A sink / 6 A source peak output current
  • Best-in-class 40 ns propagation delay
  • Maximum 10 ns part-to-part propagation delay skew
  • CMTI greater than 300 kV/µs
  • Opto-compatible input with pin-to-pin replacement capability
  • Wide-body LDSO package with 8 mm creepage and CTI 600
  • Absolute maximum output supply voltage up to 35 V
  • UVLO options optimized for Si, IGBT, and SiC switches
  • Safety certifications planned per IEC 60747-17 and UL 1577

Applications

  • Battery energy storage systems (BESS)
  • EV charging infrastructure
  • DIN rail power supplies
  • General-purpose motor drives
  • Photovoltaic inverters
  • Industrial motor control

Block Diagram

1ED301xMC12I

Infineon — 1ED301xMC12I Opto-emulator Gate Driver IC

Evaluation Board

EVAL-1ED3012MC12I-SIC

Evaluation board for 1ED3012MC12I - 6.5 A, 5.7 kV (rms) single -channel galvanic isolated gate driver with Opto-emulator Input

This evaluation board is designed to evaluate 1ED3012MC12I isolated gate driver ICs and discrete power switches in a half-bridge configuation. This board includes two 1ED3012MC12I and a galvanically isolated on-board power supply generated with the 2EP130R transformer driver IC. The board includes two, unassembled IMZC120R012M2H CoolSiC™ 1200 V SiC Trench MOSFETs in TO247-4 package, which can be substituted to evaluate other Infineon switches.

User Manual