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onsemi | FDP52N20

Manufacturer Part #

FDP52N20

FDP52N20 Series 200 V 52 A 0.049 Ohm Through Hole N-Channel MOSFET - TO-220-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2443
Product Specification Section
onsemi FDP52N20 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 49mΩ
Rated Power Dissipation: 357|W
Qg Gate Charge: 49nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The FDP52N20 is a 200 V 49 mO N-Channel enhancement mode power field effect transistors are produced using proprietary, planar stripe, DMOS technology

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • RDS(on) = 0.041 O ( Typ.)@ VGS = 10 V, ID = 26 A
  • Low gate charge( Typ. 49nC)
  • Low Crss ( Typ. 66 pF)
  • Fast switching
  • 100% avalanche tested
  • Improve dv/dt capability
  • RoHS Compliant 

Applications:

  • High efficient S.M.P.S
  • Active power factor correction

View the complete family of N-Channel Mosfet

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,870.00
USD
Quantity
Unit Price
50
$2.97
150
$2.93
500
$2.89
1,000
$2.87
2,000+
$2.82
Product Variant Information section