2N5884G in Tray by onsemi | Bipolar (BJT) Transistors | Future Electronics
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onsemi | 2N5884G

Manufacturer Part #

2N5884G

2N Series 80 V 25 A PNP Complementary Silicon High-Power Transistor - TO-204AA

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
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Product Specification Section
onsemi 2N5884G - Technical Attributes
Attributes Table
Polarity: PNP
Type: Power Transistor
CE Voltage-Max: 80V
Collector Current Max: 25A
DC Current Gain-Min: 35
Package Style:  TO-3 (TO-204)
Mounting Method: Screw Mount
Features & Applications

The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.

Features:

  • Low Collector−Emitter Saturation Voltage
    • VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
  • Low Leakage Current
    • ICEX = 1.0 mAdc (max) at Rated Voltage
  • Excellent DC Current Gain
    • hFE = 20 (min) at IC = 10 Adc
  • High Current Gain Bandwidth Product
    • ft = 4.0 MHz (min) at IC = 1.0 Adc
  • Pb−Free Packages are Available

 

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Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
200
Multiple Of:
100
Total
$1,198.00
USD
Quantity
Unit Price
1
$6.26
10
$6.18
30
$6.13
75
$6.08
200+
$5.99
Product Variant Information section