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Infineon | BSZ0501NSIATMA1

Manufacturer Part #

BSZ0501NSIATMA1

BSZ0501NSI series 30V 40A 2.0 mOhm N-Ch S3O8 OptiMOS™ 5

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSZ0501NSIATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 2kΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 33nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 25A
Turn-on Delay Time: 4ns
Turn-off Delay Time: 22ns
Rise Time: 4ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Input Capacitance: 2000pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,750.00
USD
Quantity
Unit Price
5,000
$0.55
10,000+
$0.54
Product Variant Information section