
Manufacturer Part #
BSZ0501NSIATMA1
BSZ0501NSI series 30V 40A 2.0 mOhm N-Ch S3O8 OptiMOS™ 5
Product Specification Section
Infineon BSZ0501NSIATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Fabrication Site Change
01/06/2023 Details and Download
Detailed change information Subject - Introduction of 300mm wafer diameter at Infineon Technologies Austria AG, Austria - Capacity extension at Infineon Technologies Wuxi Co., Ltd., China for PG-TDSON-8 packages.Reason - Next phase of Front-End capacity expansion by introduction of 300mm wafer diameter to support continuous increasing customer demand - Implementation of additional assembly site for improved delivery security
Part Status:
Active
Active
Infineon BSZ0501NSIATMA1 - Technical Attributes
Attributes Table
Product Status: | Active |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 2kΩ |
Rated Power Dissipation: | 2.1W |
Qg Gate Charge: | 33nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 25A |
Turn-on Delay Time: | 4ns |
Turn-off Delay Time: | 22ns |
Rise Time: | 4ns |
Fall Time: | 3ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2V |
Input Capacitance: | 2000pF |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
5,000
$0.425
10,000
$0.42
15,000+
$0.415
Product Variant Information section
Available Packaging
Package Qty:
5000 per Reel
Mounting Method:
Surface Mount