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Diodes Incorporated | DMTH6010LPD-13

Manufacturer Part #

DMTH6010LPD-13

Dual N-Channel 60 V 13.1 A (Ta) 2.8 W Surface Mount Mosfet - PowerDI5060-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMTH6010LPD-13 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 11mΩ
Rated Power Dissipation: 2.8W
Qg Gate Charge: 40.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 13.1A
Turn-on Delay Time: 5.7ns
Turn-off Delay Time: 20.8ns
Rise Time: 8.8ns
Fall Time: 7.4ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 2615pF
Package Style:  POWERDI5060-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,100.00
USD
Quantity
Unit Price
2,500
$0.84
5,000
$0.83
7,500+
$0.815
Product Variant Information section