Infineon | IRFB3006PBF

This new family of benchmark performance MOSFETS from 60V-200V offer up to 20% lower RDS(on) than previous versions.  These MOSFETs are ideal for high current DC/DC switching applications and high current DC motor drive applications. The low RDS(on) helps improve thermal efficiency that is crucial to any high current design.  In addition to low RDS(on), this is the first family of MOSFETs on the market to offer a package current rating of 195A for TO-220, D2PAK and TO-262 which is more than 60% improvement from typical package ratings. Most competitors only rate their packages to 120A. The D2PAK reduces RDS(on) even further by as much as 16% over a standard D2PAK and has a package ID rating of 240A which makes it one of the most rugged surface mount packages on the market.

The IRFB3006PbF features TrenchFET Gen 6 Technology.  This 60Volt, 195Amp N-channel device in the TO-220 PAK package, features maximum on-resistance of 2.5 milliohms at a 10-V gate drive voltage. Specifically designed for applications such as:

• Power supplies
• High power DC motors
• Inverters
• Power tools

Features and benefits include:

• Improved gate, avalanche and dynamic dV/dt ruggedness
• Fully characterized capacitance and avalanche SOA
• Enhanced body diode dV/dt and di/dt capability
• Lead-free, RoHS Compliant
• Qualified to industrial grade and MSL1