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Infineon | IPD50N06S409ATMA2

Manufacturer Part #

IPD50N06S409ATMA2

IPD50N06S4 Series 60 V 9 mOhm 50 A OptiMOS®-T2 Power-Transistor-PG-TO252-3-11

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD50N06S409ATMA2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 9mΩ
Rated Power Dissipation: 71W
Qg Gate Charge: 36nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 50A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 20ns
Rise Time: 40ns
Fall Time: 5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 2911pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,250.00
USD
Quantity
Unit Price
2,500
$0.50
5,000
$0.495
7,500
$0.49
12,500+
$0.48
Product Variant Information section