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Infineon | IRF7842TRPBF

Manufacturer Part #

IRF7842TRPBF

Single N-Channel 40 V 2.5 W 50 nC Silicon Surface Mount Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon IRF7842TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 5.9mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 50nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 21ns
Rise Time: 12ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.25V
Technology: Si
Height - Max: 1.5mm
Length: 5mm
Input Capacitance: 4500pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The IRF7842TRPBF is a single N-Channel 40 V 2.5 W 33 nC Hexfet Power Mosfet. Operating temperature ranges from -55°C to 150°C and available in Surface Mount SOIC-8 Package.

Features:

  • Very Low RDS(on) at 4.5V VGS
  • Low Gate Charge
  • Fully Characterized Avalanche Voltage and Current

Applications:

  • Synchronous MOSFET for Notebook Processor Power
  • Secondary Synchronous Rectification for Isolated DC-DC Converters
  • Synchronous Fet for Non-Isolated DC-DC Converters
  • Lead-Free

View the available List of N-Channel Power Mosfets

Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
36,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,900.00
USD
Quantity
Unit Price
4,000
$0.475
8,000
$0.47
12,000
$0.465
16,000+
$0.46
Product Variant Information section