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Référence fabricant

IRF7842TRPBF

Single N-Channel 40 V 2.5 W 50 nC Silicon Surface Mount Mosfet - SOIC-8

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date: 2410
Product Specification Section
Infineon IRF7842TRPBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 5.9mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 50nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 21ns
Rise Time: 12ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.25V
Technology: Si
Height - Max: 1.5mm
Length: 5mm
Input Capacitance: 4500pF
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications

The IRF7842TRPBF is a single N-Channel 40 V 2.5 W 33 nC Hexfet Power Mosfet. Operating temperature ranges from -55°C to 150°C and available in Surface Mount SOIC-8 Package.

Features:

  • Very Low RDS(on) at 4.5V VGS
  • Low Gate Charge
  • Fully Characterized Avalanche Voltage and Current

Applications:

  • Synchronous MOSFET for Notebook Processor Power
  • Secondary Synchronous Rectification for Isolated DC-DC Converters
  • Synchronous Fet for Non-Isolated DC-DC Converters
  • Lead-Free

View the available List of N-Channel Power Mosfets

Pricing Section
Stock global :
28 000
États-Unis:
28 000
Sur commande :Order inventroy details
24 000
Stock d'usine :Stock d'usine :
0
Délai d'usine :
13 Semaines
Commande minimale :
4000
Multiples de :
4000
Total 
1 560,00 $
USD
Quantité
Prix unitaire
4 000
$0.39
8 000
$0.385
16 000
$0.38
20 000+
$0.375
Product Variant Information section