IPP320N20N3GXKSA1 in Tube by Infineon | Mosfets | Future Electronics
text.skipToContent text.skipToNavigation

Manufacturer Part #

IPP320N20N3GXKSA1

Single N-Channel 200 V 32 mOhm 22 nC OptiMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2409
Product Specification Section
Infineon IPP320N20N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 32mΩ
Rated Power Dissipation: 136|W
Qg Gate Charge: 22nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
400
USA:
400
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$60.50
USD
Quantity
Unit Price
50
$1.21
200
$1.19
500
$1.18
1,250
$1.17
2,000+
$1.15
Product Variant Information section