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Manufacturer Part #
STW20NK50Z
N-Channel 500 V 0.27 Ohm Flange Mount SuperMESH Power Mosfet - TO-247
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | 2516 | ||||||||||
STMicroelectronics STW20NK50Z - Product Specification
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STMicroelectronics STW20NK50Z - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 0.27Ω |
| Rated Power Dissipation: | 190W |
| Qg Gate Charge: | 85nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 20A |
| Turn-on Delay Time: | 28ns |
| Turn-off Delay Time: | 70ns |
| Rise Time: | 20ns |
| Fall Time: | 15ns |
| Gate Source Threshold: | 3.75V |
| Input Capacitance: | 2600pF |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Features & Applications
The STW20NK50Z is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Features:
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatability
Applications:
- Switching applications
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole
