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Manufacturer Part #
BSG0811NDATMA1
Dual N-Channel 25 V 3/0.8 mOhm 5.6/20 nC OptiMOS™ Power Mosfet - TISON8-4
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:5000 per Reel Mounting Method:Surface Mount |
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| Date Code: | 2526 | ||||||||||
Product Specification Section
Infineon BSG0811NDATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries.
See List
Item cannot ship to following countries:
Austria
HTS Code:
8541.29.00.55
ECCN:
EAR99
PCN Information:
Part Status:
Active
Active
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Infineon BSG0811NDATMA1 - Technical Attributes
Attributes Table
| Fet Type: | Dual N-Ch |
| Drain-to-Source Voltage [Vdss]: | 25V |
| Drain-Source On Resistance-Max: | 3mΩ/0.8mΩ |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 5.6nC/20nC |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
5,000+
$1.74
Product Variant Information section
Available Packaging
Package Qty:
5000 per Reel
Mounting Method:
Surface Mount