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Infineon | BSG0811NDATMA1

Manufacturer Part #

BSG0811NDATMA1

Dual N-Channel 25 V 3/0.8 mOhm 5.6/20 nC OptiMOS™ Power Mosfet - TISON8-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2526
Product Specification Section
Infineon BSG0811NDATMA1 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 3mΩ/0.8mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 5.6nC/20nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$12,450.00
USD
Quantity
Unit Price
5,000+
$2.49
Product Variant Information section