onsemi | MBRS120T3G

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifiers state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

Features:

• Small Compact Surface Mountable Package with J-Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25°C)
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection

Mechanical Characteristics:

• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 2500 units per reel
• Cathode Polarity Band
• Marking: B12
• Pb-Free Package is Available