FDN335N in Reel by onsemi | Mosfets | Future Electronics
text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. FDN335N

onsemi | FDN335N

Manufacturer Part #

FDN335N

N-Channel 20 V 0.07 Ohm 2.5 V Specified PowerTrench Mosfet SSOT-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2323
Product Specification Section
onsemi FDN335N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 70mΩ
Rated Power Dissipation: 0.5|W
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications

The FDN335N is a 20 V 0.07 Ohm N-Channel 2.5 V Specified PowerTrench MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features:

  • 1.7 A, 20 V. RDS(on) = 0.07 Ω @ VGS = 4.5 V. RDS(on) = 0.100 Ω @ VGS = 2.5 V.
  • Low gate charge (3.5nC typical).
  • High performance trench technology for extremely lowRDS(ON).
  • High power and current handling capability.

Applications:

  • Load switch
  • Battery protection
  • Power management
Read More...
Pricing Section
Global Stock:
39,000
USA:
39,000
On Order:Order inventroy details
60,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$321.00
USD
Quantity
Unit Price
3,000
$0.107
9,000
$0.104
15,000
$0.103
30,000
$0.101
60,000+
$0.0987
Product Variant Information section