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onsemi | FDN335N

Manufacturer Part #

FDN335N

N-Channel 20 V 0.07 Ohm 2.5 V Specified PowerTrench Mosfet SSOT-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2415
Product Specification Section
onsemi FDN335N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 70mΩ
Rated Power Dissipation: 0.5|W
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications

The FDN335N is a 20 V 0.07 Ohm N-Channel 2.5 V Specified PowerTrench MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features:

  • 1.7 A, 20 V. RDS(on) = 0.07 Ω @ VGS = 4.5 V. RDS(on) = 0.100 Ω @ VGS = 2.5 V.
  • Low gate charge (3.5nC typical).
  • High performance trench technology for extremely lowRDS(ON).
  • High power and current handling capability.

Applications:

  • Load switch
  • Battery protection
  • Power management
Pricing Section
Global Stock:
318,000
USA:
318,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$324.00
USD
Quantity
Unit Price
3,000
$0.108
9,000
$0.105
15,000
$0.104
30,000
$0.102
60,000+
$0.0997
Product Variant Information section